A
R
C
H
I
V
E
I
N
F
O
R
M
A
T
I
O
N
A
R
C
H
I
V
E
I
N
F
O
R
M
A
T
I
O
N
2
RF Device Data
Freescale Semiconductor
MRF5S19090HR3 MRF5S19090HSR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics
(TC
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 65 Vdc, VGS
= 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, VGS
= 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS
= 5 Vdc, VDS
= 0 Vdc)
IGSS
—
—
1
μAdc
On Characteristics (DC)
Gate Threshold Voltage
(VDS
= 10 Vdc, ID
= 200
μAdc)
VGS(th)
2.5
2.7
3.5
Vdc
Gate Quiescent Voltage
(VDS
= 28 Vdc, ID
= 850 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain--Source On--Voltage
(VGS
= 10 Vdc, ID
= 2 Adc)
VDS(on)
—
0.26
—
Vdc
Forward Transconductance
(VDS
= 10 Vdc, ID
= 2 Adc)
gfs
—
5
—
S
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, VGS
= 0 Vdc)
Crss
—
1.7
—
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD
= 28 Vdc, IDQ
= 850 mA, Pout
= 18 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz,2--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @
±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth
@
±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
Gps
13.5
14.5
—
dB
Drain Efficiency
ηD
24
25.8
—
%
Intermodulation Distortion
IM3
—
--37
--35
dBc
Adjacent Channel Power Ratio
ACPR
—
--51
--48
dBc
Input Return Loss
IRL
—
--14.5
--9
dB
1. Part is internally matched both on input and output.
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